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DMN31D5UFZ-7B

MOSFET N-CH 30V .22A X2-DFN0606-


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN31D5UFZ-7B
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 201
  • Description: MOSFET N-CH 30V .22A X2-DFN0606- (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 393mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C 220mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6.9 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 220mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.22A
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
See Relate Datesheet