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DMN32D2LFB4-7

MOSFET N-CH 30V 300MA 3-DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN32D2LFB4-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 273
  • Description: MOSFET N-CH 30V 300MA 3-DFN (Kg)

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 15 Weeks
Contact Plating Gold
Rds On (Max) @ Id, Vgs 1.2 Ω @ 100mA, 4V
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 39pF @ 3V
Number of Pins 3
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Operating Temperature -55°C~150°C TJ
Vgs (Max) ±10V
Packaging Tape & Reel (TR)
Turn-Off Delay Time 51 ns
Published 2017
Continuous Drain Current (ID) 300mA
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Gate to Source Voltage (Vgs) 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Drain to Source Breakdown Voltage 30V
Height 350μm
ECCN Code EAR99
Length 1mm
Resistance 1.2Ohm
Additional Feature HIGH RELIABILITY
Width 600μm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Radiation Hardening No
REACH SVHC No SVHC
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
RoHS Status ROHS3 Compliant
Pin Count 3
Lead Free Lead Free
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Case Connection DRAIN
Turn On Delay Time 11 ns
See Relate Datesheet