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  • DMN4030LK3-13

DMN4030LK3-13

MOSFET N-CH 40V 9.4A DPAK


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN4030LK3-13
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 469
  • Description: MOSFET N-CH 40V 9.4A DPAK (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2010
JESD-609 Code e3
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.14W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 604pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta
Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V
Rise Time 12.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10.7 ns
Turn-Off Delay Time 13.8 ns
Continuous Drain Current (ID) 13.7A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.4A
Drain to Source Breakdown Voltage 40V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet