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  • DMN53D0U-7

DMN53D0U-7

MOSFET N-CH 50V 0.3A SOT23


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN53D0U-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 964
  • Description: MOSFET N-CH 50V 0.3A SOT23 (Kg)

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Details

Tags

Parameters
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature HIGH RELIABILITY
Capacitance 50pF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 520mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 37.1pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Rise Time 2.8ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 5V
Vgs (Max) ±12V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.3A
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 50V
RoHS Status ROHS3 Compliant
See Relate Datesheet