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DMN55D0UTQ-7

MOSFET N-CH 50V 160MA SOT-523


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN55D0UTQ-7
  • Package: SOT-523
  • Datasheet: PDF
  • Stock: 177
  • Description: MOSFET N-CH 50V 160MA SOT-523 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 200mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 160mA Ta
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±12V
Continuous Drain Current (ID) 160mA
Drain Current-Max (Abs) (ID) 0.16A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 50V
RoHS Status ROHS3 Compliant
See Relate Datesheet