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  • DMN60H080DS-7

DMN60H080DS-7

Trans Mosfet N-ch 600V 0.08A 3-PIN SOT-23 T/r


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN60H080DS-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 949
  • Description: Trans Mosfet N-ch 600V 0.08A 3-PIN SOT-23 T/r (Kg)

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Details

Tags

Parameters
Factory Lead Time 21 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100 Ω @ 60mA, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 70mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.07A
Drain-source On Resistance-Max 290Ohm
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
See Relate Datesheet