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DMN62D0LFB-7

Trans MOSFET N-CH 60V 0.1A Automotive 3-Pin DFN T/R


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN62D0LFB-7
  • Package: 3-UFDFN
  • Datasheet: PDF
  • Stock: 946
  • Description: Trans MOSFET N-CH 60V 0.1A Automotive 3-Pin DFN T/R (Kg)

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Details

Tags

Parameters
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±20V
Fall Time (Typ) 16.3 ns
Turn-Off Delay Time 26.4 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 2Ohm
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 6 pF
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 470mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 470mW
Case Connection DRAIN
Turn On Delay Time 3.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 32pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 4.5V
Rise Time 3.4ns
See Relate Datesheet