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DMN62D1SFB-7B

Trans MOSFET N-CH 60V 0.41A Automotive 3-Pin DFN T/R


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN62D1SFB-7B
  • Package: 3-UFDFN
  • Datasheet: PDF
  • Stock: 991
  • Description: Trans MOSFET N-CH 60V 0.41A Automotive 3-Pin DFN T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 470mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 470mW
Case Connection DRAIN
Turn On Delay Time 3.89 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 40mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 40V
Current - Continuous Drain (Id) @ 25°C 410mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 10V
Rise Time 4.93ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.96 ns
Turn-Off Delay Time 18.8 ns
Continuous Drain Current (ID) 410mA
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet