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DMN67D8L-7

MOSFET N-CH 60V 0.21A SOT23


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN67D8L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 774
  • Description: MOSFET N-CH 60V 0.21A SOT23 (Kg)

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Details

Tags

Parameters
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 340mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C 210mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.82nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 210mA
Drain Current-Max (Abs) (ID) 0.21A
Drain-source On Resistance-Max 5Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 1
See Relate Datesheet