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DMNH6008SCT

MOSFET NCH 60V 130A TO220AB


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMNH6008SCT
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 324
  • Description: MOSFET NCH 60V 130A TO220AB (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 210W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2596pF @ 30V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) 20V
Continuous Drain Current (ID) 130A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 190 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet