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  • DMP1245UFCL-7

DMP1245UFCL-7

MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP1245UFCL-7
  • Package: 6-PowerUFDFN
  • Datasheet: PDF
  • Stock: 213
  • Description: MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 217.64 ns
Turn-Off Delay Time 219.4 ns
Continuous Drain Current (ID) 6.6A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.029Ohm
Drain to Source Breakdown Voltage -12V
Radiation Hardening No
Factory Lead Time 17 Weeks
REACH SVHC No SVHC
Contact Plating Gold
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerUFDFN
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
JESD-30 Code R-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 613mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1357.4pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.6A Ta
Gate Charge (Qg) (Max) @ Vgs 26.1nC @ 8V
Rise Time 33.11ns
Drain to Source Voltage (Vdss) 12V
See Relate Datesheet