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  • DMP2022LSS-13

DMP2022LSS-13

MOSFET P-CH 20V 10A 8-SOIC


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP2022LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 305
  • Description: MOSFET P-CH 20V 10A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 850.995985mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2444pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 56.9nC @ 10V
Rise Time 9.9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 76.5 ns
Turn-Off Delay Time 108 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 770mV
Gate to Source Voltage (Vgs) 12V
Pulsed Drain Current-Max (IDM) 35A
DS Breakdown Voltage-Min 20V
Height 1.5mm
Length 5.3mm
Width 4.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet