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  • DMP2039UFDE-7

DMP2039UFDE-7

MOSFET P-CH 25V 6.7A 6UDFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP2039UFDE-7
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 147
  • Description: MOSFET P-CH 25V 6.7A 6UDFN (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.7A Ta
Gate Charge (Qg) (Max) @ Vgs 48.7nC @ 8V
Rise Time 23.5ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 80.5 ns
Turn-Off Delay Time 137.6 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.4A
Drain to Source Breakdown Voltage -25V
Height 580μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 27mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 800mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 15.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 6.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
See Relate Datesheet