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  • DMP2066LSS-13

DMP2066LSS-13

MOSFET P-Channel 2.5W


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP2066LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 273
  • Description: MOSFET P-Channel 2.5W (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 850.995985mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 35.5 ns
Turn-Off Delay Time 79.1 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 26A
DS Breakdown Voltage-Min 20V
Height 1.5mm
Length 5.3mm
Width 4.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet