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  • DMP2130LDM-7

DMP2130LDM-7

MOSFET P-CH 20V 3.4A SOT-26


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP2130LDM-7
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 591
  • Description: MOSFET P-CH 20V 3.4A SOT-26 (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 443pF @ 16V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Factory Lead Time 7 Weeks
Gate Charge (Qg) (Max) @ Vgs 7.3nC @ 4.5V
Mount Surface Mount
Rise Time 20ns
Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20V
Package / Case SOT-23-6
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Number of Pins 6
Vgs (Max) ±12V
Transistor Element Material SILICON
Fall Time (Typ) 20 ns
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 38 ns
Packaging Tape & Reel (TR)
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) 12V
Published 2008
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 20A
JESD-609 Code e3
DS Breakdown Voltage-Min 20V
Height 600μm
Pbfree Code yes
Length 1.6mm
Width 1.2mm
Radiation Hardening No
REACH SVHC No SVHC
Part Status Active
See Relate Datesheet