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  • DMP3017SFGQ-7

DMP3017SFGQ-7

MOSFET P-CH 30V 11.5A POWERDI333


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP3017SFGQ-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 952
  • Description: MOSFET P-CH 30V 11.5A POWERDI333 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2246pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.5A Ta
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Turn-Off Delay Time 45.6 ns
Continuous Drain Current (ID) -11.5A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Height 850μm
RoHS Status ROHS3 Compliant
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Manufacturer Package Identifier POWERDI3333-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 940mW Ta
Power Dissipation 940mW
Turn On Delay Time 7.5 ns
See Relate Datesheet