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  • DMP3099L-7

DMP3099L-7

MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP3099L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 262
  • Description: MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A (Kg)

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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.08W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.08W
Turn On Delay Time 4.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 563pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V
Rise Time 5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) -3.8A
Threshold Voltage -2.1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet