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DMP4015SSSQ-13

MOSFET P-CH 40V 9.1A 8-SO


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP4015SSSQ-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 144
  • Description: MOSFET P-CH 40V 9.1A 8-SO (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.45W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4234pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.1A Ta
Gate Charge (Qg) (Max) @ Vgs 47.5nC @ 5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 9.1A
Drain Current-Max (Abs) (ID) 10.1A
Drain-source On Resistance-Max 0.011Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
See Relate Datesheet