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  • DMP56D0UFB-7

DMP56D0UFB-7

MOSFET P-CH 50V 200MA 3DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP56D0UFB-7
  • Package: 3-UFDFN
  • Datasheet: PDF
  • Stock: 257
  • Description: MOSFET P-CH 50V 200MA 3DFN (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 425mW Ta
Element Configuration Single
Turn On Delay Time 4.46 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50.54pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.58nC @ 4V
Rise Time 6.63ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±8V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 21.9 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.2A
Height 480μm
Length 1.08mm
Width 675μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
See Relate Datesheet