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DMP6023LE-13

MOSFET P-CH 60V 7A SOT223


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP6023LE-13
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 643
  • Description: MOSFET P-CH 60V 7A SOT223 (Kg)

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Details

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Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2569pF @ 30V
Current - Continuous Drain (Id) @ 25°C 7A Ta 18.2A Tc
Gate Charge (Qg) (Max) @ Vgs 53.1nC @ 10V
Rise Time 7.1ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 18.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.028Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 62.9 mJ
Max Junction Temperature (Tj) 150°C
Height 1.8mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188.014037mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature HIGH RELIABILITY
Capacitance 2.569nF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet