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  • DMP6023LFG-7

DMP6023LFG-7

MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP6023LFG-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 790
  • Description: MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF (Kg)

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Details

Tags

Parameters
Number of Pins 8
Weight 72.007789mg
Transistor Element Material SILICON
Manufacturer Package Identifier POWERDI3333-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Capacitance 2.569nF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2569pF @ 30V
Current - Continuous Drain (Id) @ 25°C 7.7A Ta
Gate Charge (Qg) (Max) @ Vgs 53.1nC @ 10V
Rise Time 7.1ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -7.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 150°C
Height 850μm
Length 3.3mm
Width 3.3mm
RoHS Status ROHS3 Compliant
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
See Relate Datesheet