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DMT10H010LCT

MOSFET N-CH 100V TO220AB


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMT10H010LCT
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 745
  • Description: MOSFET N-CH 100V TO220AB (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta 139W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 98A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 98A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 62A
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 92A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 15 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet