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DMT5015LFDF-7

MOSFET N-CH 50V 9.1A 6DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMT5015LFDF-7
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 859
  • Description: MOSFET N-CH 50V 9.1A 6DFN (Kg)

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Details

Tags

Parameters
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 15mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 820mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 902.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.1A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 5.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 2.7 ns
Turn-Off Delay Time 10.6 ns
Continuous Drain Current (ID) 9.1A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 50V
RoHS Status ROHS3 Compliant
See Relate Datesheet