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DMT6016LSS-13

MOSFET N-CH 60V 9.2A 8-SOIC


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMT6016LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 723
  • Description: MOSFET N-CH 60V 9.2A 8-SOIC (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 60A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 864pF @ 30V
Current - Continuous Drain (Id) @ 25°C 9.2A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 5.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 9.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.5A
See Relate Datesheet