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DMTH6004LPS-13

MOSFET N-CH 60V 22A PWRDI5060-8


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMTH6004LPS-13
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 913
  • Description: MOSFET N-CH 60V 22A PWRDI5060-8 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.6W Ta 138W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4515pF @ 30V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 96.3nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0031Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 160 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet