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DN2450K4-G

MOSFET MOSFET DEPLETION MODE 500V 10 Ohms


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-DN2450K4-G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 540
  • Description: MOSFET MOSFET DEPLETION MODE 500V 10 Ohms (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOW THRESHOLD
HTS Code 8541.90.00.00
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 300mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 350mA Tj
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 350mA
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 1A
FET Feature Depletion Mode
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet