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  • DN2540N5-G

DN2540N5-G

MICROCHIP - DN2540N5-G - MOSFET, N CH, 400V, 0.5A, TO-220AB-3


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-DN2540N5-G
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 955
  • Description: MICROCHIP - DN2540N5-G - MOSFET, N CH, 400V, 0.5A, TO-220AB-3 (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 500mA Tj
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage -1.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Factory Lead Time 5 Weeks
Drain Current-Max (Abs) (ID) 0.5A
Mount Through Hole
Drain to Source Breakdown Voltage 400V
Mounting Type Through Hole
Pulsed Drain Current-Max (IDM) 0.5A
Package / Case TO-220-3
FET Feature Depletion Mode
Height 22.86mm
Length 10.67mm
Number of Pins 3
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
Weight 6.000006g
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 15W Tc
Element Configuration Single
Power Dissipation 15W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25 Ω @ 120mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
See Relate Datesheet