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DN3765K4-G

MICROCHIP DN3765K4-G. MOSFET, N CHANNEL, 650V, 0.3A, TO-252AA-3


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-DN3765K4-G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 648
  • Description: MICROCHIP DN3765K4-G. MOSFET, N CHANNEL, 650V, 0.3A, TO-252AA-3 (Kg)

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Details

Tags

Parameters
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 150mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 825pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Tj
Rise Time 75ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 8Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 0.5A
FET Feature Depletion Mode
Height 2.39mm
Length 6.73mm
Width 6.1mm
See Relate Datesheet