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DSS4160TQ-7

DSS4160TQ-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DSS4160TQ-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 387
  • Description: DSS4160TQ-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 725mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 725mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 280mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 280mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Frequency - Transition 150MHz
RoHS Status ROHS3 Compliant
See Relate Datesheet