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ECH8654-TL-H

MOSFET 2P-CH 20V 5A ECH8


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-ECH8654-TL-H
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 363
  • Description: MOSFET 2P-CH 20V 5A ECH8 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1.5W
Base Part Number ECH8654
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 14 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 38m Ω @ 3A, 4.5V
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 55ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 900μm
Length 2.9mm
Width 2.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet