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EMA6DXV5T1G

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-EMA6DXV5T1G
  • Package: SOT-553
  • Datasheet: PDF
  • Stock: 287
  • Description: Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-553
Number of Pins 5
Packaging Cut Tape (CT)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation 230mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MA6
Pin Count 5
Qualification Status Not Qualified
Number of Elements 2
Polarity PNP
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation 230mW
Transistor Application SWITCHING
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 160
Resistor - Base (R1) 47k Ω
Continuous Collector Current 100mA
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet