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EMG2DXV5T1

Bipolar Transistors - Pre-Biased 50V Dual BRT NPN


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-EMG2DXV5T1
  • Package: SOT-553
  • Datasheet: PDF
  • Stock: 714
  • Description: Bipolar Transistors - Pre-Biased 50V Dual BRT NPN (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-553
Number of Pins 5
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 230mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number EMG
Pin Count 5
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation 230mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 47k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
See Relate Datesheet