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ESH2DHE3/5BT
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Application | EFFICIENCY |
| Forward Voltage | 930mV |
| Max Reverse Voltage (DC) | 200V |
| Average Rectified Current | 2A |
| Number of Phases | 1 |
| Reverse Recovery Time | 35 ns |
| Peak Reverse Current | 2μA |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Peak Non-Repetitive Surge Current | 60A |
| Reverse Voltage | 200V |
| Recovery Time | 25 ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | ESH2D |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 2μA @ 200V |
| Voltage - Forward (Vf) (Max) @ If | 930mV @ 2A |
| Forward Current | 2A |
| Operating Temperature - Junction | -55°C~175°C |
| Max Surge Current | 60A |
| Output Current-Max | 2A |
See Relate Datesheet