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ESM3030DV

ESM3030DV datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-ESM3030DV
  • Package: SOT-227-4, miniBLOC
  • Datasheet: -
  • Stock: 186
  • Description: ESM3030DV datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Chassis Mount, Panel, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory BIP General Purpose Power
Voltage - Rated DC 300V
Max Power Dissipation 225W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 100A
Base Part Number ESM3030
Pin Count 4
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 225W
Case Connection ISOLATED
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 85A 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2.4A, 85A
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 1.8V
Emitter Base Voltage (VEBO) 7V
hFE Min 300
VCEsat-Max 2.2 V
Fall Time-Max (tf) 600ns
Height 9.1mm
Length 38.2mm
Width 25.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet