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  • FCA36N60NF

FCA36N60NF

FCA36N60NF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCA36N60NF
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 933
  • Description: FCA36N60NF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 4245pF @ 100V
Current - Continuous Drain (Id) @ 25°C 34.9A Tc
Factory Lead Time 39 Weeks
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Mounting Type Through Hole
Vgs (Max) ±30V
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Fall Time (Typ) 4 ns
Weight 6.401g
Turn-Off Delay Time 92 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 34.9A
Operating Temperature -55°C~150°C TJ
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 30V
Packaging Tube
Published 2013
Drain-source On Resistance-Max 0.095Ohm
Series FRFET®, SuperFET® II
Drain to Source Breakdown Voltage 600V
Nominal Vgs 3.7 V
JESD-609 Code e3
Height 20.1mm
Length 16.2mm
Width 5mm
Pbfree Code yes
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 312W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 312W
Turn On Delay Time 27 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
See Relate Datesheet