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  • FCH104N60F

FCH104N60F

FCH104N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCH104N60F
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 277
  • Description: FCH104N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

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Parameters
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 809 mJ
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series HiPerFET™, Polar™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 357W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V
Rise Time 58ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 37A
See Relate Datesheet