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FCH47N60F-F085

MOSFET N-CH 600V 47A TO-247


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCH47N60F-F085
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 857
  • Description: MOSFET N-CH 600V 47A TO-247 (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.075Ohm
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 810 mJ
RoHS Status ROHS3 Compliant
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Automotive, AEC-Q101, SuperFET™
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FCH47N60
Number of Elements 1
Power Dissipation-Max 417W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 110 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 47A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 160ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 125 ns
Turn-Off Delay Time 540 ns
Continuous Drain Current (ID) 47A
See Relate Datesheet