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  • FCMT199N60

FCMT199N60

FCMT199N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCMT199N60
  • Package: 4-PowerTSFN
  • Datasheet: PDF
  • Stock: 722
  • Description: FCMT199N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Element Configuration Single
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 199m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 20.2A
Gate to Source Voltage (Vgs) 30V
Height 1.05mm
Factory Lead Time 33 Weeks
Length 8mm
Width 8mm
RoHS Status ROHS3 Compliant
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Number of Pins 4
Weight 449.03225mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series SuperFET® II
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 208W Tc
See Relate Datesheet