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FCP104N60F

FCP104N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCP104N60F
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 383
  • Description: FCP104N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series HiPerFET™, Polar™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 357W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6130pF @ 25V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21.4 ns
Turn-Off Delay Time 102 ns
Continuous Drain Current (ID) 37A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 809 mJ
Height 15.215mm
Length 10.36mm
Width 4.672mm
RoHS Status ROHS3 Compliant
See Relate Datesheet