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FCP190N60-GF102

MOSFET N-CH 600V TO-220-3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCP190N60-GF102
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 124
  • Description: MOSFET N-CH 600V TO-220-3 (Kg)

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IMPORTANT NOTICE

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET® II
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 199m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 20.2A
RoHS Status ROHS3 Compliant
See Relate Datesheet