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FCP600N60Z

N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCP600N60Z
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 913
  • Description: N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mO (Kg)

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Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 89W Tc
Element Configuration Single
Power Dissipation 89W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.4A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 24ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 7.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 650V
Height 16.51mm
Length 10.67mm
Width 4.83mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
See Relate Datesheet