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FCPF1300N80Z

FCPF1300N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCPF1300N80Z
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 253
  • Description: FCPF1300N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 24W Tc
Element Configuration Single
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 8.3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 800V
Height 16.07mm
Length 10.36mm
Width 4.9mm
RoHS Status ROHS3 Compliant
See Relate Datesheet