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  • FCPF190N60

FCPF190N60

FCPF190N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCPF190N60
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 269
  • Description: FCPF190N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 20.2A
Threshold Voltage 2.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 60.6A
Avalanche Energy Rating (Eas) 400 mJ
Height 16.07mm
Length 10.36mm
Factory Lead Time 12 Weeks
Width 4.9mm
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Radiation Hardening No
Contact Plating Tin
Mount Through Hole
REACH SVHC No SVHC
Mounting Type Through Hole
RoHS Status ROHS3 Compliant
Package / Case TO-220-3 Full Pack
Number of Pins 3
Lead Free Lead Free
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 39W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 39W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 199m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Rise Time 10ns
See Relate Datesheet