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FCPF380N60-F152

MOSFET N-CH 600V 10.2A TO-220F


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCPF380N60-F152
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 981
  • Description: MOSFET N-CH 600V 10.2A TO-220F (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.565008g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET® II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 31W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
Case Connection ISOLATED
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1665pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.2A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 10.2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
See Relate Datesheet