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FCU5N60TU

MOSFET N-CH 600V 4.6A I-PAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCU5N60TU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 261
  • Description: MOSFET N-CH 600V 4.6A I-PAK (Kg)

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Details

Tags

Parameters
Factory Lead Time 36 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 343.08mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 4.6A
Number of Elements 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 54W
Case Connection ISOLATED
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 4.6A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.95Ohm
Drain to Source Breakdown Voltage 600V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet