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  • FDB024N08BL7

FDB024N08BL7

FDB024N08BL7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDB024N08BL7
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 154
  • Description: FDB024N08BL7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 246W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 246W
Case Connection DRAIN
Turn On Delay Time 47 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13530pF @ 40V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
Rise Time 66ns
Factory Lead Time 16 Weeks
Drain to Source Voltage (Vdss) 80V
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Drive Voltage (Max Rds On,Min Rds On) 10V
Mount Surface Mount
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Mounting Type Surface Mount
Turn-Off Delay Time 87 ns
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Continuous Drain Current (ID) 229A
Number of Pins 7
JEDEC-95 Code TO-263CB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0024Ohm
Weight 1.312g
DS Breakdown Voltage-Min 80V
Height 4.7mm
Length 10.2mm
Width 9.4mm
Transistor Element Material SILICON
Radiation Hardening No
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
See Relate Datesheet