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  • FDB060AN08A0

FDB060AN08A0

MOSFET Discrete Auto N-Ch PowerTrench


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDB060AN08A0
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 828
  • Description: MOSFET Discrete Auto N-Ch PowerTrench (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 255W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 255W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 79ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Avalanche Energy Rating (Eas) 350 mJ
Height 4.83mm
Length 10.67mm
Width 11.33mm
Factory Lead Time 8 Weeks
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 6MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 80A
See Relate Datesheet