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  • FDB075N15A-F085

FDB075N15A-F085

MOSFET N-CH 150V 110A D2PAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDB075N15A-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 707
  • Description: MOSFET N-CH 150V 110A D2PAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 333W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Factory Lead Time 33 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Case Connection DRAIN
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Turn On Delay Time 33 ns
Number of Pins 3
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 80A, 10V
Weight 1.31247g
Vgs(th) (Max) @ Id 4V @ 250μA
Transistor Element Material SILICON
Input Capacitance (Ciss) (Max) @ Vds 5595pF @ 75V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Operating Temperature -55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Packaging Tape & Reel (TR)
Rise Time 46ns
Published 2013
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Series Automotive, AEC-Q101, PowerTrench®
Fall Time (Typ) 25 ns
JESD-609 Code e3
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 110A
Pbfree Code yes
Gate to Source Voltage (Vgs) 4V
Part Status Active
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 150V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Avalanche Energy Rating (Eas) 502 mJ
Number of Terminations 2
RoHS Status ROHS3 Compliant
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
See Relate Datesheet