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FDB12N50FTM-WS

Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDB12N50FTM-WS
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 680
  • Description: Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series UniFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 700MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 165W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 165W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 700m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1395pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.5A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 11.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet