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  • FDB8896-F085

FDB8896-F085

Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDB8896-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 715
  • Description: Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2525pF @ 15V
Current - Continuous Drain (Id) @ 25°C 19A Ta 93A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 102ns
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mount Surface Mount
Vgs (Max) ±20V
Mounting Type Surface Mount
Fall Time (Typ) 44 ns
Turn-Off Delay Time 58 ns
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Continuous Drain Current (ID) 93A
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.0068Ohm
Weight 1.31247g
Drain to Source Breakdown Voltage 30V
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) 74 mJ
Radiation Hardening No
Operating Temperature -55°C~175°C TJ
RoHS Status RoHS Compliant
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
See Relate Datesheet